Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits
arXiv QuantumArchived Apr 01, 2026✓ Full text saved
arXiv:2603.29065v1 Announce Type: new Abstract: Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$\gamma$-Al$_2$O$
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Quantum Physics
[Submitted on 30 Mar 2026]
Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits
David A. Garcia-Wetten, Mitchell J. Walker, Peter G. Lim, André Vallières, Maria G. Jimenez-Guillermo, Miguel A. Alvarado, Dominic P. Goronzy, Anna Grassellino, Jens Koch, Vinayak P. Dravid, Mark C. Hersam, Michael J. Bedzyk
Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/\gamma-Al_2O_3/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial \gamma-Al_2O_3, for which we find a low intrinsic two-level system loss, \delta_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.
Comments: 38 pages, 10 figures
Subjects: Quantum Physics (quant-ph); Materials Science (cond-mat.mtrl-sci); Superconductivity (cond-mat.supr-con)
Report number: FERMILAB-PUB-26-0206-SQMS
Cite as: arXiv:2603.29065 [quant-ph]
(or arXiv:2603.29065v1 [quant-ph] for this version)
https://doi.org/10.48550/arXiv.2603.29065
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From: Peter Gilhwan Lim [view email]
[v1] Mon, 30 Mar 2026 23:05:18 UTC (6,534 KB)
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