Characterization and Comparison of Energy Relaxation in Fluxonium Qubits
arXiv QuantumArchived Mar 26, 2026✓ Full text saved
arXiv:2603.23636v1 Announce Type: new Abstract: Fluxonium superconducting qubits have demonstrated long coherence times and high single- and two-qubit gate fidelities, making them a favorable building block for superconducting quantum processors. We investigate the dominant limitations to fluxonium qubit energy relaxation time $T_1$ using a set of eight planar, aluminum-on-silicon qubits. We find that a circuit-based model for capacitive dielectric loss best captures the frequency dependence of
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✦ AI Summary· Claude Sonnet
Quantum Physics
[Submitted on 24 Mar 2026]
Characterization and Comparison of Energy Relaxation in Fluxonium Qubits
Kate Azar, Lamia Ateshian, Mallika T. Randeria, Renée DePencier Piñero, Jeffrey M. Gertler, Junyoung An, Felipe Contipelli, Leon Ding, Michael Gingras, Kevin Grossklaus, Max Hays, Thomas M. Hazard, Junghyun Kim, Bethany M. Niedzielski, Hannah Stickler, Kunal L. Tiwari, Helin Zhang, Jeffrey A. Grover, Jonilyn L. Yoder, Mollie E. Schwartz, William D. Oliver, Kyle Serniak
Fluxonium superconducting qubits have demonstrated long coherence times and high single- and two-qubit gate fidelities, making them a favorable building block for superconducting quantum processors. We investigate the dominant limitations to fluxonium qubit energy relaxation time T_1 using a set of eight planar, aluminum-on-silicon qubits. We find that a circuit-based model for capacitive dielectric loss best captures the frequency dependence of T_1, which we analyze within both a two-level and a six-level energy relaxation model. We convert the measured T_1 into an effective capacitive quality factor Q_\mathrm{C}^{\mathrm{eff}} to compare qubits on equal footing, accounting for independently estimated contributions from 1/f flux noise and radiative loss to the control and readout circuitry. We apply this methodology to compare qubits from two fabrication processes: a baseline process and one that applies a fluorine-based wet treatment prior to Josephson junction deposition. We resolve a small improvement of (13.8 \pm 8.4)\% in the process mean Q_\mathrm{C}^{\mathrm{eff}}, indicating that the fluorine treatment may have reduced loss from the metal-substrate interface, but did not address the primary source of loss in these fluxonium qubits.
Comments: 25 pages, 20 figures
Subjects: Quantum Physics (quant-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2603.23636 [quant-ph]
(or arXiv:2603.23636v1 [quant-ph] for this version)
https://doi.org/10.48550/arXiv.2603.23636
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Submission history
From: Kate Azar [view email]
[v1] Tue, 24 Mar 2026 18:21:42 UTC (14,180 KB)
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